Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO

Authors

DOI:

https://doi.org/10.23851/mjs.v31i3.717

Keywords:

BiPbSrCaCuZno superconducting, hetrostructure, light emitting diode.

Abstract

This paper shows the applied voltage effect on the superconductor substrate sample. The substrate temperature (Ts) increases the activation energy of the substrate atoms. Thus, the injecting of minority carriers (holes) increased in ZnO semiconductor. These carriers recombine with electrons of 4S1 shell for Cu atom. The recombination occurs by two ways from band to band (direct recombination) or via traps (indirect recombination). The recombination mechanisms produce photons emission in the ultraviolet and visible spectrum. The calibration between voltage and temperature achieved using Variac device. The applied voltages were 60, 65, 70, and 80 Volt, and the recorded substrate temperatures were 300, 320, 350, and 400 °C, respectively.

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Key Dates

Published

20-08-2020

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Section

Original Article

How to Cite

[1]
S. M. Shakouli, “Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO”, Al-Mustansiriyah J. Sci., vol. 31, no. 3, pp. 110–113, Aug. 2020, doi: 10.23851/mjs.v31i3.717.

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