Substrate Temperature Effect on the Spectrum Emission in Superconductor Heterostructure BiPbSrCaCuZnO
DOI:
https://doi.org/10.23851/mjs.v31i3.717Keywords:
BiPbSrCaCuZno superconducting, hetrostructure, light emitting diode.Abstract
This paper shows the applied voltage effect on the superconductor substrate sample. The substrate temperature (Ts) increases the activation energy of the substrate atoms. Thus, the injecting of minority carriers (holes) increased in ZnO semiconductor. These carriers recombine with electrons of 4S1 shell for Cu atom. The recombination occurs by two ways from band to band (direct recombination) or via traps (indirect recombination). The recombination mechanisms produce photons emission in the ultraviolet and visible spectrum. The calibration between voltage and temperature achieved using Variac device. The applied voltages were 60, 65, 70, and 80 Volt, and the recorded substrate temperatures were 300, 320, 350, and 400 °C, respectively.
Downloads
References
B. Sharma, and R. Purohit, Semiconductor heterojunctions: Elsevier, 2015.
B. L. Sharma, R. K. Purohit, and S. N. Mukerjee, "Detectivity calculations for photovoltaic heterojunction detectors," Infrared Physics, vol. 10, no. 4, pp. 225-231, 1970/12/01/, 1970.
D. F. Franceschini, "Chapter 12 - Growth, structure, and properties of plasma-deposited amorphous hydrogenated Carbon-Nitrogen films," Handbook of Thin Films, H. Singh Nalwa, ed., pp. 649-676, Burlington: Academic Press, 2002.
S. Al Dabagh, "The Effect of Fe Concentration on the Structure and Optical Properties of ZnO Films by Using Pulsed Laser Deposition," IOSR Journal of Dental and Medical Sciences, vol. 1, pp. 54-60, 02/01, 2016.
P. Hazra, and S. Jit, "A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation," Journal of Semiconductors, vol. 35, no. 1, pp. 014001, 2014/01, 2014.
A. A. Shehab, N. A. AL-Hamadni, and D. M. Latif, "Effect of annealing temperature on the Photodetector characteristic of SnS/Si heterojunction" journal of multidisciplinary Engineering science studies (JMESS), p. vol.2 Issue 9, September 2016."
V. H. Mistry, B. V. Mistry, B. Modi, and U. Joshi, "Effect of annealing on pulse laser deposition grown copper oxide thin film." p. 040070 (2017).
K. M. Haroun, M. N. M. Abdalla, S. S. Elwakeel, and Y. H. A. A. Alraheim, "Effect of Pulse Energy on the Optical Properties of ZnS Thin Films prepared Using Pulse Laser Technique," American Journal of Modern Physics, vol. 7, no. 5, pp. 173-179, 2018.
E. Tovar, L. Daza, R. Castro-Rodriguez, J. Méndez-Gamboa, R. A. Medina-Esquivel, I. Pérez-Quintana, and A. A. Iribarren Alfonso, "Structural and optical properties of ZnO thin films prepared by laser ablation using target of ZnO powder mixture with glue," Bulletin of Materials Science, vol. 40, 06/09, 2017.
G. Amin, "ZnO and CuO nanostructures: low temperature growth, characterization, their optoelectronic and sensing applications," Link?ping University Electronic Press, 2012
Downloads
Key Dates
Published
Issue
Section
License
Articles accepted for publication in Al-Mustansiriyah Journal of Science (MJS) are protected under the Creative Commons Attribution 4.0 International License (CC BY-NC). Authors of accepted articles are requested to sign a copyright release form prior to their article being published. All authors must agree to the submission, sign copyright release forms, and agree to be included in any correspondence between MJS and the authors before submitting a work to MJS. For personal or educational use, permission is given without charge to print or create digital copies of all or portions of a MJS article. However, copies must not be produced or distributed for monetary gain. It is necessary to respect the copyright of any parts of this work that are not owned by MJS.
How to Cite
