Effect of Temperature on Silicon Carriers Mobilities Using MATLAB
DOI:
https://doi.org/10.23851/mjs.v28i3.185Keywords:
Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.Abstract
The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).Downloads
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Key Dates
Published
28-07-2018
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Original Article
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How to Cite
[1]
S. N. Ibrahim, “Effect of Temperature on Silicon Carriers Mobilities Using MATLAB”, Al-Mustansiriyah J. Sci., vol. 28, no. 3, pp. 214–219, Jul. 2018, doi: 10.23851/mjs.v28i3.185.