Effect of Temperature on Silicon Carriers Mobilities Using MATLAB

Authors

  • Saad N. Ibrahim

DOI:

https://doi.org/10.23851/mjs.v28i3.185

Keywords:

Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.

Abstract

The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).

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Published

2018-07-28

How to Cite

[1]
S. N. Ibrahim, “Effect of Temperature on Silicon Carriers Mobilities Using MATLAB”, Al-Mustansiriyah Journal of Science, vol. 28, no. 3, pp. 214–219, Jul. 2018.

Issue

Section

Physical Sciences

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