CdSe and CdTe Mechanical Properties Revealed by COMSOL Multiphasics

Authors

DOI:

https://doi.org/10.23851/mjs.v34i4.1355

Keywords:

High pressure, mechanical stress, simulation, strain, semiconductor

Abstract

Two Metal chalcogenide compounds CdTe and CdSe have been studied in depth because they are used in many optoelectronic and electronic devices. High pressure causes structural phase transitions in semiconductor materials, which have been the subject of much research. CdTe is a direct band-gap IIeVI semiconductor. Cadmium-tellurium crystalline compound has been used in more and more industries. High dislocation density is one of the problems with bulk-grown CdTe. Comsol Multiphysics was used to evaluate mechanical stress on a material. COMSOL Multiphysics 5.5 allows you to access a database of physics simulations. (CdSe and CdTe) were simulated to show the effects of mechanical stress. We use a physical model called Solid Mechanics to model the effect of mechanical stress. The results show that when pressure was applied at different levels (50pa, 100pa, 200pa, 300pa, 400pa), the strain values of (CdSe or CdTe) were similar, but (CdSe) was more resistant to deformation than (CdTe).

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Published

30-12-2023

Submission Dates

Received: 24/03/2023

Revised: 05/04/2023

Accepted: 22/05/2023

How to Cite

[1]
A. K. . Mohammed Ali, “CdSe and CdTe Mechanical Properties Revealed by COMSOL Multiphasics”, Al-Mustansiriyah Journal of Science, vol. 34, no. 4, pp. 104–109, Dec. 2023.

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Section

Physical Sciences