STRUCTURE AND OPTICAL PROPERTIES OF CdSe THIN FILMS AS A FUNCTION OF THE ANNEALING TIME

Eman M. Noori

doi:10.23851/mjs.v27i5.175

Authors

Eman M. Noori X-Ray Techniques Department, Institute of Medical Technology, Middle Technical University, Baghdad

DOI:

https://doi.org/10.23851/mjs.v27i5.175

Keywords:

Structure properties, Optical properties, Annealing time, Cadmium Selenide

Abstract

Cadmium (Cd) and selenide powder used to prepared cadmium selenide alloy. (CdSe) thin films of thickness 1320 Å were thermally evaporated technique deposited on glass substrate at room temperature. The as-deposited films were annealed in air atmosphere at 100^oC, for three different annealing times (60, 120 and 180 minutes). The structural investigation performed by x-ray diffraction (XRD) technique; showed that the films have a polycrystalline and hexagonal (wurtzite) structure. For all deposited films the preferential orientation is (002).The value of lattice constant (a), grain size, strain and dislocation density of the deposited films are calculated and their variations with annealing times are studied. The absorbance spectra of cadmium selenide thin films were recorded in the wave length range of 400 nm to 900 nm. The values of the optical band gap energy, E_g (allowed direct transitions), calculated from the absorption spectra, ranged between (2.54 and 2.41) eV.

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References

Hankare P.P., Bhuse V.M., Garadkar K.M., Delekar S.D., and Mulla I.S., Chemical deposition of cubic CdSe and HgSe thin films and their characterization, Semicond. Sci. Technol., 19 (2004) 70-75.

https://doi.org/10.1088/0268-1242/19/1/012

Harishchandra K. Sadekar, Anil VithalGhule, Ramphal Sharma, Fabrication of CdSe thin film for photosensor application, International Journal of Innovations in Engineering and Technology (IJIET), 5, Issue 1(2015)35-41,

Borah M.N., Chaliha S., Sarmah P.C., Rahman A., Electrical properties of thermally evaporated doped and undoped films of CdSe, Indian Journal of Pure&Applied Physics,45(2007) 687-691.

Christopher E. Hamilton, Dennis J. Flood and Andrew R. Barron,Thin film CdSe/CuSe photovoltaic on a flexible single walled carbon nanotube substrate, Phys. Chem. Chem. Phys.,15(2013) 3930-3938.

https://doi.org/10.1039/c3cp50435b

PMid:23403836

Lou S., Zhou C., Wang H., Shen H., Cheng G.Du, Annealing effects on the photoresponse properties of CdSenanocrystal thin films, Mater. Chem. Phys., 128(2011)483-488.

https://doi.org/10.1016/j.matchemphys.2011.03.035

Murali K.R., Sivaramamoorthy K., Kottaisamy M., Asath S. Bahadur, Photoconductive studies on electron beam evaporated CdSe films, Physica B, 404(2009) 2449-2454.

https://doi.org/10.1016/j.physb.2009.05.010

Saaminathan V., Murali K.R., Importance of pulse reversal effect of CdSe thin films for optoelectronic devices, J. Cryst.Growth, 279(2005)229-240.

https://doi.org/10.1016/j.jcrysgro.2005.02.020

CristianBaban, Rusu G.I., On the structural and optical characteristics of CdSe thin films, Applied Surface Science, 211 (2003) 6-12

https://doi.org/10.1016/S0169-4332(03)00299-X

Mathuri S., Ramamurthi K., Ramesh R. Babu, Investigation on CdSe thin film deposited by electron beam evaporation technique, International Journal of Chem Tech Research,7,2, : 967-973,2015.

Okereke N.A., and Ekpunopi A.J., Influence of thickness on the structure and optical properties of cadmium selenide thin films, Advances in Applied Science Research, 3, 3:1244-1249, 2012.

Yadav A., Abhijit, Studies on cadmium selenide (CdSe) thin films deposited by spray pyrolsipyrolysisials chemistry andphysics, 121(1-2)(2010)53-57.

Pogrebnjak A.D., Jamil N.Y., Abdulla S.N., Muhammed A.M., The effect of γ – irradiation on the structural and physical properties of CdSe thin films, Proceeding of the International Conference Nanomaterials: Application and Properties, 2, 1,01PCSI21(2013) (3pp).

Deshpande M.P., NityaGarg, Sandip V. Bhatt, PallaviSakariya, S.H. Chaki, Spectroscopy and structural study on CdSe thin films deposited by chemical bath deposition, Advanced Materials Letters, ISSN 0976-3961: (2013) 1-13.

Sarmah K., SarmaR.,Das L., Structural characterization of thermal evaporated CdSe thin films, Chalcogenide Letters 5,8,(2008)153-163.

Klug H.P., and Alexander L.E., X-ray diffraction procedures: 491, John Willey and Sons Inc., New York, 1945.

Williamson G.K., and Hall W.H., X-ray line broadening from field aluminum and wolfram, Metallurgica, 1(1953) 22-31.

Williamson G.K., and Smallman R.C., III, Dislocation densities in some annealed and cold-worked metals from measurement on the X-ray debye-scherrer spectrum, Philosophical Magazine (1956) 34-46.

https://doi.org/10.1080/14786435608238074

Zhao Y., Yan Z., Liu J., Wei A., Synthesis and characterization of CdSenanocrystalline thin film deposited by chemical bath deposited, Mater. Sci. Semicond. Process, 16(2013) 1592-1598.

https://doi.org/10.1016/j.mssp.2013.04.027

Powder Diffraction Data File, Joint Committee of Powder Diffraction Standard: 143 International Center for Diffraction Data, USA Card No.8-459, (1984)143.

Patel K.D., Shah R.K., Makhija D.L., Pathak V.M., Srivastava R., Chemical and structural characterization CdSe thin films, Journal of Ovonic Research, 4,6(2008) 129-139.

Klug H.P., and Alexander L.E., X-ray diffraction procedures: 491, John Willey and Sons Inc., New York, 1945.

Zhao Y., Yan Z., Liu J., Wei A., Synthesis and characterization of CdSenanocrystalline thin film deposited by chemical bath deposited, Mater. Sci. Semicond. Process, 16(2013) 1592-1598.

https://doi.org/10.1016/j.mssp.2013.04.027

Sze, S. M. Physics of semiconductor devices; 2nd Ed.: 848 John Wiley and Sons Inc.: New York, 1981.

PMCid:PMC348793

Moskovits M., In chemical physics of atomic and molecular clusters; Soles, G. (Ed.): 397Amsterdam, North Holland, 1990.