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Effect of Temperature on Silicon Carriers Mobilities Using MATLAB


 
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1. Title Title of document Effect of Temperature on Silicon Carriers Mobilities Using MATLAB
 
2. Creator Author's name, affiliation, country Saad N. Ibrahim; Iraq
 
3. Subject Discipline(s)
 
3. Subject Keyword(s) Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.
 
4. Description Abstract The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).
 
5. Publisher Organizing agency, location Mustansiriyah University
 
6. Contributor Sponsor(s)
 
7. Date (YYYY-MM-DD) 2018-07-28
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier http://mjs.uomustansiriyah.edu.iq/ojs1/index.php/MJS/article/view/185
 
10. Identifier Digital Object Identifier (DOI) http://dx.doi.org/10.23851/mjs.v28i3.185
 
11. Source Title; vol., no. (year) Al-Mustansiriyah Journal of Science; Vol 28, No 3 (2017)
 
12. Language English=en en
 
14. Coverage Geo-spatial location, chronological period, research sample (gender, age, etc.)
 
15. Rights Copyright and permissions Copyright (c) 2018 Al-Mustansiriyah Journal of Science
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