Effect of Temperature on Silicon Carriers Mobilities Using MATLAB

Saad N. Ibrahim

Abstract


The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).

Keywords


Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.

Full Text:

PDF


DOI: http://dx.doi.org/10.23851/mjs.v28i3.185

Refbacks

  • There are currently no refbacks.


Copyright (c) 2018 Al-Mustansiriyah Journal of Science

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

Copyright (c) 2018 by Al-Mustansiriyah Journal of Science
ISSN: 1814-635X (Print), ISSN: 2521-3520 (online)