Effect of Temperature on Silicon Carriers Mobilities Using MATLAB

Saad N. Ibrahim

Abstract


The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).

Keywords


Carrier Mobilities, Doping Concentration, Hole Mobility, Electron Mobility.

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DOI: http://dx.doi.org/10.23851/mjs.v28i3.185

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ISSN: 1814-635X (Print), ISSN: 2521-3520 (online)